Direct bumping on integrated circuit contacts enabled by metal-to-insulator adhesion

ABSTRACT

A semiconductor device including a contact pad and circuit metallization on the surface of an integrated circuit (IC) chip comprises a stack of protection layers over the surface of the chip. The stack consists of a first inorganic layer ( 303 , preferably silicon nitride) on the chip surface, followed by a polymer layer ( 306 , preferably benzocyclobutene) on the first inorganic layer ( 303 ), and finally an outermost second inorganic layer ( 310 , preferably silicon dioxide) on the polymer layer ( 303 ). A window ( 301   a ) in the stack of layers exposes the metallization ( 301 ) of the IC. A patterned seed metal layer ( 307 , preferably copper) is on the metallization ( 301 ) in the window and on the second inorganic layer ( 310 ) around the window. A buffer metal layer ( 308 , preferably copper) is positioned on the seed metal layer ( 307 ). A metal reflow element ( 309 ) is attached to the buffer metal ( 308 ).

FIELD OF THE INVENTION

The present invention is related in general to the field ofsemiconductor devices and processes and more specifically to methods forsealing and protecting integrated circuit bonding pads to reduce therisk of delamination.

DESCRIPTION OF THE RELATED ART

When an integrated circuit (IC) chip is to be assembled on a substrateby the flip-chip technology, the connecting members between chip andsubstrate are typically shaped as balls or bumps, and are commonly madeof reflowable metals such as solder. The chip metallization has mostcommonly been aluminum. For aluminum, it has been studied extensively inthe semiconductor technology, how the chip contact pads have to beprepared to employ solder connections successfully. Because solder andthe easily-oxidized aluminum cannot be contacted reliably, a major partof the pad preparation includes the deposition of so-called “under bumpmetals”. These metals form typically one or more layers over the contactpad proper; they provide ohmic contact to the chip metallization, tightseals with the protective chip overcoat in order to prevent moistureingress or corrosive attack of the pad, and permit attachment of solderbumps. For aluminum chip metallization, these technical challenges havebeen successfully mastered.

However, changes implemented in the chip structure to satisfy theongoing trends of device miniaturization and higher circuit speeds haverecently confronted the flip-chip assembly technology with several newchallenges. As a consequence of device miniaturization, the RC timeconstant of the interconnection between active circuit elementsincreasingly dominates the achievable IC speed-power product.Consequently, there is a strong need to replace the relatively highimpedance of the traditional aluminum metallization by the lowerimpedance of metals such as copper.

For copper, the selection and fabrication of under bump metals has to bechanged. A process practiced by the industry is based on forming a layerof aluminum over the copper bond pad and thus re-constructing thetraditional situation of an aluminum pad. This process, though, has anumber of drawbacks due to technical and cost issues. An alternativesolution has yet not been developed.

Another change to advance the electrical characteristics involves theadoption of low-k dielectric materials in the chip circuitry. Thesematerials are mechanically much weaker than the conventional silicondioxide layers, and therefore much more sensitive to thermo-mechanicalstress. These stresses, on the other hand, originate in assembled chipsfrom the difference in the coefficients of thermal expansion (CTE)between the semiconductor chip material and the plastic substratematerial. Examples of semiconductor materials are silicon, silicongermanium, or gallium arsenide; the CTE for silicon, for instance, isapproximately 2 to 3 ppm/° C. An example of a plastic substrate materialis FR-4 with a CTE of approximately 25 ppm/° C., resulting in a CTEdifference between silicon and FR-4 of about an order of magnitude. As aconsequence of this CTE difference, thermo-mechanical stresses arecreated at the solder interconnections between chip and substrate,especially in the regions of the joints, when the assembly is subjectedto temperature cycling during device usage or reliability testing. Thesestresses tend to fatigue the joints and the bumps, and result in cracksin solder joints and underlying insulating chip materials, resulting ineventual failure of the assembly.

A commonly practiced method to absorb part of the thermo-mechanicalstress on the solder joints utilizes a polymer layer on top of the chipprotective overcoat to surround the joints and locally fill the gapbetween chip and substrate. This technique is also helpful in mitigatingthe stress on the chip dielectric material underlying the contact pads.The polymer has to be heat tolerant enough to withstand the solderreflow temperature, but it is poorly suited for adhesion to the underbump metals.

Consequently, a need has arisen for a chip pad structure and fabricationmethod, which offers solder bump reliability under the thermo-mechanicalstresses of flip-chip assemblies, when copper is used as chipmetallization and low-k dielectric materials are present under the chipcontact pads. The methodology should be coherent, low-cost, and flexibleenough to be applied to different semiconductor product families and awide spectrum of design and process variations. Preferably, theseinnovations should be accomplished using the installed equipment base sothat no investment in new manufacturing machines is needed.

SUMMARY OF THE INVENTION

One embodiment of the invention is a semiconductor device including acontact pad and circuit metallization on the surface of an integratedcircuit (IC) chip. The device comprises a stack of protection layersover the surface of the chip; the stack consists of a first inorganiclayer on the chip surface, followed by a polymer layer on the firstinorganic layer, and finally a second inorganic layer on the polymerlayer. A window in the stack of layers exposes the metallization on theIC chip. A patterned seed metal layer such as copper is on themetallization in the window and on the second inorganic layer around thewindow. A buffer metal layer, preferably copper, is positioned on theseed metal layer. A metal reflow element, such as a bump, is attached tothe buffer metal. In another embodiment, the buffer metal is a stack oflayers and a wire bond is attached to the top metal layer.

In another embodiment, the buffer metal layer is remote from the windowto the IC metallization, but connected to the window by a reroutingtrace of the seed metal. By rerouting, the reflow bumps may bepositioned in a more uniform, less crowded pattern, and may also permitlarger reflow bump sizes. Further, at the remote bump positions, thickerbuffer layers are available to mitigate thermo-mechanical stresses andthus protect neighboring brittle low-k dielectrics materials.

The first inorganic layer is selected so that it is essentiallyimpenetrable to moisture; preferred materials include silicon nitride,silicon oxynitride, and silicon carbide. The polymer layer is selectedso that it provides a buffer mitigating and absorbing thermo-mechanicalstress; preferred materials include polyimides, polyamic acids,polybenzoxazoles, benzocyclobutenes, and polysiloxanes. The secondinorganic layer is selected so that it can form mechanically strongseals with metal layers such as copper; preferred materials includesilicon dioxide, silicon nitride, and silicon oxynitride.

Another embodiment of the invention is a wafer-level method forcompleting the fabrication of bonding pads on IC wafers withinterconnection metallization. According to the method, a stack ofprotection layers is deposited over the wafer surface; the stackincludes a first layer of inorganic material, followed by a layer ofpolymer material, and topped by a second layer of inorganic material.The stack of protection layers is patterned by opening a plurality ofwindows in the stack to expose portions of the chip interconnectionmetallization. A conductive seed layer is then deposited, covering thepatterned stack in order to establish ohmic contact to the metallizationexposed in the windows and to create a mechanically strong seal betweenthe seed metal and the topmost layer of inorganic material. Next, apatterned buffer metal layer is deposited onto the exposed seed layer.Finally, the seed layer portions outside the buffer metal layer areremoved.

In another embodiment, patterned metal traces are defined, whichredistribute the connections between the buffer metal layers and thewindows to the chip metallization.

Embodiments of the present invention are related to solder-ball andwire-bonded IC assemblies, semiconductor device packages, surface mountand chip-scale packages. It is a technical advantage that the inventionoffers a low-cost method of improving the adhesion of under bump metallayers to insulating layers, especially polymer insulators. It is anadditional technical advantage that the invention facilitates thererouting of solder bump and wire bond locations to contact pads, thusoffering a method to distribute the interconnecting reflow bumps moreuniformly over the whole device area and to prevent stress-relateddamage to brittle low-k dielectric layers under the contact pads.Further technical advantages include the opportunity to scale theassembly to smaller dimensions, supporting the ongoing trend of ICminiaturization, and to distribute the chip contacts more evenly overthe chip area rather than restricting the contacts to a lineararrangement along the chip perimeters.

The technical advantages represented by certain embodiments of theinvention will become apparent from the following description of thepreferred embodiments of the invention, when considered in conjunctionwith the accompanying drawings and the novel features set forth in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross section of a portion of a flip-chip assemblywith solder bumps, as fabricated by known technology.

FIG. 2 is a schematic cross section of a portion of a solder bump andundermetal arrangement over the chip contact pad metallization accordingto known technology.

FIG. 3 is a schematic cross section of a chip contact pad, protected bya stack of insulator layers and contacted by a solder bump with seedlayer and metal stud over the chip contact pad metallization, accordingto an embodiment the invention.

FIG. 4 is a schematic cross section of another embodiment of theinvention, illustrating the rerouting of the solder bump location fromthe window to the chip metallization, with the chip surface protected bya stack of insulator layers.

FIG. 5 is a schematic cross section of another embodiment of theinvention, illustrating the rerouting of the wire bond location from thewindow to the chip metallization, with the chip surface protected by astack of insulator layers.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention is related to U.S. patent application Ser. No.10/086,117, filed on Feb. 26, 2002 (Bojkov et al., “Waferlevel Methodfor Direct Bumping on Copper Pads in Integrated Circuits”).

The impact of the present invention can be most easily appreciated byhighlighting the shortcomings of the known approaches to form contactsto integrated circuits (ICs). FIG. 1 illustrates schematically anexample of the metallurgical requirements in known technology for acontact pad of a small portion of an IC chip generally designated 100. Asemiconductor material 101, typically silicon, has patterned aluminummetallization 102 and is protected by a dielectric, moisture-impermeableprotective overcoat 103, usually silicon nitride or oxynitride. A windowhas been opened in the overcoat 103 to expose metallization 102 andleave a protective perimeter 103 a around metallization 102. Anadditional “under bump” metallization 104 has been deposited ontometallization 102 and patterned so that it overlaps by a distance 104 aover the overcoat 103. This additional metallization 104 usuallyconsists of a sequence of thin layers. The bottom layer is typically arefractory metal 105, such as chromium, titanium, or tungsten, whichprovides an ohmic contact to aluminum 102 and a moisture-impenetrableinterface to overcoat 103. The top metal 106 is solderable; examples aregold, copper, nickel, or palladium. Finally, solder material isdeposited, commonly by evaporation, plating or screen-printing, andreflowed to form bump 107. These solder bumps assume various shapes(examples are semi-spheres, domes and truncated balls) after the reflowprocess, influenced by the forces of surface tension during the reflowprocess.

During and after assembly of the IC chip by solder reflow to an externalpart such as a substrate or circuit board, and then during deviceoperation, significant temperature differences and temperature cyclesappear between semiconductor chip 100 and the substrate. The reliabilityof the solder joint is strongly influenced by the coefficients ofthermal expansion (CTE) of the semiconductor material and the substratematerial. For example, there is more than one order of magnitudedifference between the coefficients of thermal expansion of thesemiconductor material silicon (about 2 to 3 ppm/° C.) and thepolymer-based material FR-4 (about 25 ppm/° C.). This CTE differencecauses thermomechanical stresses, most of which the solder joints haveto absorb. Detailed calculations involving the optimum height and volumeof the solder connection and the expected onset of fatigue and crackingsuggested a number of solder design solutions.

One method aims at absorbing part of the thermomechanical stress on thesolder joints by plastic material surrounding the joints and filling thegap between chip and substrate. However, this so-called underfillingmethod represents an unwelcome process step after device attachment tothe motherboard.

Another method applies a polymer layer on top of the protective overcoatwith the aim of reducing the stress to the overcoat perimeter and thedielectric material underlying the contact pad. FIG. 2 illustratesschematically an example of a contact pad, generally designated 200,including a polymer overcoat. A silicon chip 201 has patternedmetallization 202 (aluminum, copper, or an alloy thereof) and isprotected by a moisture-impermeable inorganic overcoat 203 (for example,silicon nitride, about 1 μm thick) and a polymer layer 210 (for example,benzocyclobutene, polyimide, or similar polymers tolerant to thetemperatures required for solder reflow, about 3 to 10 μm thick). Awindow has been opened through both overcoats. Layer 205 of theunder-bump metallization 204 establishes contact to the metallization202, and layer 206 provides solderability to the solder bump 207.

Experience has shown that the polymer layer 210 can absorb a significantportion of the thermo-mechanical stress created by temperature cycling;unfortunately, however, it turned out that it is difficult to providereliable adhesion between polymer layer 210 and the under-bumpmetallization layer 204. Actually, the interface 203 a of the inorganicovercoat 203 and the underbump refractory metal layer 205 is strong andreliable under temperature-cycle conditions. However, the interface 210a of the relatively thick polymer overcoat and the refractory metallayer 205 turned out to be sensitive to elevated temperatures or totemperature cycling and has a high probability of delamination.

The adhesion problem is aggravated by the process flow for chips withmetallization 202 made of copper or a copper alloy (instead ofaluminum). In addition, due to bondability and contact resistance issuesof copper oxide, it is a challenge to establish reliable contact tosolder material. Approaches based on adding an interface layer ofaluminum, or of metals with higher affinity to oxygen than copper, arecostly and not very effective.

FIG. 3 illustrates an embodiment of the invention, which resolves thesedifficulties and shortcomings. The schematic cross section of FIG. 3depicts a metal structure for a contact pad, generally designated 300,of an IC having copper interconnecting metallization 301. The top copperlayer 301 of the IC is located over insulating material 302, which mayinclude brittle, low-k compounds. Metallization 301 is protected byfirst inorganic overcoat 303, polymeric overcoat 306, and secondinorganic overcoat 310. The first inorganic overcoat 303 consistspreferably of silicon nitride or silicon oxynitride, preferably in thethickness range from about 0.5 to 2 μm. Other materials include siliconcarbide, polyimide, or stacked layers thereof. Overcoat 303 overlaps thecopper layer 301 by a length 303 a. The organic overcoat 306 consistspreferably of a polybenzoxazole compound, preferably in the thicknessrange from about 3 to 10 μm. Other suitable materials include polyimide,a polyamic acid, benzocyclobutene, polysiloxane, or related materials.The prime function of this organic material is to help absorbthermomechanical stress transferred by the solder bumps after thecompletion of the device assembly on external parts such as printedwiring boards.

The second inorganic overcoat 310 is a low-temperature silicon-baseddielectric, preferably silicon dioxide; other materials include siliconnitride, silicon oxynitride, and stacked layers thereof. The secondinorganic layer 310 has a thickness preferably in the range from about0.5 to 2 μm. Inorganic overcoat 310 has excellent adhesion to polymerlayer 306, and offers outstanding adhesion to the subsequent copperlayers.

Overcoats 303 and 310, and especially the thicker overcoat 306 exhibit aslope 306 a towards chip metallization 301, brought about by the etchingof the overcoats during the window opening process for exposingmetallization 301. Preferably, layer 301 is copper or a copper alloy;other metals, however, are sometimes used, for example, aluminum, analuminum alloy, or a refractory metal.

After opening the window 301 a, the surface 301 b of the exposed metalis carefully cleaned; see the process detail below. The cleaning stepsrender the metal surface 301 b free of oxide, organic residues, or anycontamination so that the interface of metal 301 to the metal layer 307contributes essentially no measurable electrical resistance to theresistance of contact pad 300. Metal layer 307 is frequently referred toas the “seed metal”. In the preferred case of layer 301 being copper,seed metal layer 307 is also copper.

The seed metal layer 307 (deposition techniques see below) is patternedto overlay metal surface 301 b and overcoat slopes 306 a of the firstinorganic layer, the polymer layer, and the second inorganic layer. Thepreferred thickness range of seed layer 307 is from about 0.3 to 0.8 μm.The overlap 307 a of the seed metal on the second inorganic layer 310has a length between about 5 and 15 μm. Due to this overlap 307 a andthe materials of the second inorganic overcoat 310 and the seed metal307, the adhesion between seed metal 307 and inorganic layer 310 is sostrong that it can sustain without delamination the thermomechanicalstresses exerted by the solder joint.

Metal buffer layer 308 is deposited (various deposition methods seebelow) without contamination of the seed metal surface 307 b. The bufferlayer 308 has a thickness from about 10 to 20 μm and is, therefore,often referred to as a “stud”. The stud 308 is preferably a single metallayer, preferably made of copper; however, other metal choices such ascopper alloy or nickel are sometimes used. Alternatively, the stud 308may be a stack of metal layers. In a preferred example, the stack ofmetal layers comprises copper in contact with the seed metal 307, nickelon top of the copper, and palladium as the outermost metal of the stud.The stud width is preferably equal to the extent of seed layer 307 andfollows the contour of the overcoat slopes 306 a.

The metallurgical contact pad structure for a flip-chip IC is completedby depositing a bump 309 of reflowable metal or alloys, often simplyreferred to as “solders” (deposition methods see below). Preferredreflowable materials include tin, indium, tin/indium, tin/silver, andtin/bismuth; for some applications, the conventional tin/lead alloy isstill acceptable. Alternatively, conductive adhesives or z-axisconductive materials may be used. When electroplating is chosen as themethod of depositing the metal stud 308, electroplating is the preferredmethod of depositing solder bumps 309. This method allows small-pitchsolder bumps. When electroless plating is chosen as the method ofdepositing the metal stud, screen printing is preferred for the solderbumps; alternatively, pre-fabricated solder balls may be selected. Theseoptions result in somewhat larger bump pitch.

Another embodiment of the invention is depicted in the schematic crosssection of FIG. 4. An IC has a top metallization layer 401, for examplecopper. In many devices, metallization 401 may be in proximity tobrittle low-k dielectrics inside the IC. A stack of overcoat layersprotects the IC surface; the stack consists of the first inorganicovercoat 403 (for instance, silicon nitride or oxynitride), a polymerlayer 406 (for example, polyimide or benzocyclobutene), and the secondinorganic overcoat 410 (for example, silicon dioxide). A window of width401 a is opened in the overcoat stack and exposes the top metallization401. A seed metal layer 407 (preferred example, copper) is deposited inwindow 401 a and over the second inorganic overcoat 410. This seed metallayer is patterned so that it overlaps the window on all sides,providing excellent adhesion between the seed layer and the secondinorganic overcoat. The overlap may be on the order of 5 to 15 μm onsome window sides (length 407 a in FIG. 4), but on other window sidesthe seed metal layer is patterned as a conductive trace (indicated aslength 407 b in FIG. 4) extending to a location remote from the window.

At some location of trace 407 b, for instance at the end point asillustrated in FIG. 4, a buffer metal layer 408 may be deposited (forexample, copper or copper alloy). This buffer metal, also referred to asa “stud”, serves as the location for depositing a bump or ball 409 ofreflowable metal or alloy, for example tin-alloyed solder. There aretechnical advantages to position the solder joints remote from window401 a and thus redistribute their locations. First of all, theredistribution permits uniformly patterned locations of theinterconnection bumps, freeing them from the often crowded locations ofthe contact pads; frequently, this new degree of freedom also permitslarger bump sizes. Secondly, at the remote bump positions, thickerbuffer layers are available to mitigate thermo-mechanical stresses andthus protect neighboring brittle IC dielectrics. Significantthermo-mechanical stresses with their risk of introducing fracturing,which are typically exerted on the solder joints 409 during and afterdevice assembly, are thus more distant from sensitive dielectrics underthe contact pads, improving the device reliability.

Another embodiment of the invention is depicted in the schematic crosssection of FIG. 5. A stack of overcoat layers protects the IC surface.The stack consists of the first inorganic overcoat 503 (for instance,silicon nitride or silicon oxynitride) directly on the IC surface,followed by a polymer layer 506 (for example, polyimide orbenzocyclobutene), and the second inorganic overcoat 510 (for example,silicon dioxide) as topmost layer. A window is opened in the overcoatstack; it exposes a portion of the top IC metallization 501, which maybe in close proximity to brittle low-k dielectric layers. A seed metallayer 507 (for example, copper) is deposited in the window and over thesecond inorganic overcoat 510. This seed metal layer 507 is patterned sothat it overlaps the window on all sides, providing excellent adhesionbetween the seed layer 507 and the second inorganic overcoat 510. Theoverlap may be on the order of 5 to 15 μm on some window sides (such aslength 507 a in FIG. 5), but on other window sides the seed metal layeris patterned as a conductive trace (indicated as length 507 b in FIG. 5)extending from the window to a location remote from the window.

At some location of trace 507 b, for instance at the end point asillustrated in FIG. 5, a metal buffer is deposited as a stack of metallayers. Layer 508 of the buffer is in contact with the seed metal; apreferred choice is copper. Layer 511 preferably is nickel, and theoutermost layer 512 preferably is palladium (alternatively gold).

Attached to the outermost metal layer 512 of the buffer is bond wire509, shown in FIG. 5 as a ball bond. Preferred wire metal is gold or agold alloy; other choices include copper, copper alloy, aluminum, andaluminum alloy. Alternatively, wedge bonds of metal ribbons may be used.

Another embodiment of the invention is a wafer-level method forcompleting the fabrication of bonding pads on IC wafers, which haveinterconnecting metallization (preferably copper) integral with the IC.After completing the formation of the ICs proper, the method includes astep of depositing over the wafer surface a stack of protection layers.First, a plasma and/or chemical vapor deposition technique forms thefirst inorganic layer; preferred materials include silicon nitride,silicon oxynitride, and silicon carbide.

Next, a spin-coating technique deposits a polymer layer; preferredmaterials include polyimides, polyamic acids, polybenzoxazoles,benzocyclobutenes, and polysiloxanes. These and related materials arecommercially available from several American and Japanese suppliersincluding Arch Chemicals, Asahi Chemical, Dow Chemical, HD Microsystems,Toray, and Sumitomo-Bakelite. The glass transition temperatures of thesematerials are preferably between approximately 280 and 400° C., andtheir coefficients of thermal expansion can be tailored to a valuebetween about 25 and 55 ppm/° C. The polymer materials typically undergoa polymerization cycle (“curing”, cross linking of the polymer chains).

Finally, a low-temperature plasma and/or chemical vapor depositiontechnique forms the second inorganic layer. The preferred materials aresilicon-based dielectrics including silicon dioxide, silicon nitride,silicon oxynitride, and stacked layers of these or similar compounds.The deposition temperature is preferably less than 300° C., preferablyaround 200° C.

In a process step after depositing the stack of protection layers, thestack is patterned by opening windows in the stack in order to exposeselectively portions of the chip interconnection metallization.Thereafter, the semiconductor wafer including the topmost protectivelayer and the exposed metallization is subjected to a series of cleaningand etching steps as follows: exposing the wafer to organic solvents,thereby removing organic contamination and mechanical particles from themetal (copper) contact pads; drying the wafer in dry nitrogen; exposingthe wafer to an oxygen and nitrogen/helium/argon plasma, thereby ashingany further organic residues on the metal (copper) contact pads andoxidizing the metal (copper) surface to a controlled thickness; and,without breaking the vacuum of the plasma chamber, exposing the wafer toa hydrogen and nitrogen/helium/argon plasma, thereby removing thecontrolled metal (copper) oxide from the surface of the exposed (copper)metallization and passivating the cleaned surface, which is thensputter-etched with energetic ions so that a fresh and activated surfaceis created.

More specifically, the step of exposing the wafer to solvents may beselected from processes such as submerging the wafer in agitatedisopropyl alcohol (or, alternatively, in methanol, glycol, orN-methylpyrrolidone, for example); adding ultrasonic energy to thesolvent; spraying the wafer with an organic solvent; and treating thewafer in dry chemical vapor. Between the steps of oxygen plasma andhydrogen plasma, there may be a step of etching the wafer in an aqueousinorganic or organic acid, which helps to remove deep metal defects inthe exposed windows.

Without delay, a layer of seed metal is then deposited to cover thefresh and activated surface of the wafer, preferably by a sputteringtechnique without breaking the chamber vacuum. When the chipmetallization is copper, the seed metal may be a copper layer.Alternatively, the seed metal may be a stack made of a titanium/tungstenlayer (facing the chip metallization) and a copper layer, or similarmaterials. The refractory layer and copper layer together form the seedmetal layer. Other options include one or more refractory metals such astantalum, titanium, tungsten, molybdenum, chromium, nickel, vanadium, oran alloy of any of these metals. When the chip metallization is aluminumor an aluminum alloy, the seed metal is preferably a stack of arefractory metal/alloy layer (contacting the aluminum) and a copperlayer.

The seed layer provides strong adhesion to the topmost inorganicovercoat, cleaned and prepared as described above. Due to the adhesion,the interface between the seed metal and the insulating layer providesan essentially impenetrable seal against moisture or particles ingressfrom the ambient, and is able to withstand the thermo-mechanical stressexerted during and after the assembly of the chip. Furthermore, the seedlayer provides low electrical resistance, ohmic contact and lowthermo-mechanical stress to the metal pad; it is, therefore, well suitedfor the following plating step.

In the next process step after depositing the seed metal layer, aphotoresist layer is deposited and patterned to define the openings forexposing portions of the seed layer. Two options are available: In orderto create the embodiment of FIG. 3, the photoresist openings coincidewith the locations of the windows to the chip metallization.Alternatively, in order to create the embodiments of FIGS. 4 and 5, thephotoresist openings are in locations remote from the windows to thechip metallization. The process flow continues with the step of exposingthe seed metal layer in the openings to a hydrogen and nitrogen/argonplasma, which cleans and passivates the seed metal layer in thephotoresist openings.

In order to create the embodiments of FIGS. 3 and 4, a buffer metallayer (308 and 408, respectively) is deposited onto the seed metal layer(307 and 407, respectively) exposed in the photoresist openings. Thepreferred material of the buffer layer is copper in the thickness rangefrom about 1 to 20 μm. Alternatively, nickel can be used; its thicknessis about 0.5 to 10 μm. The deposition is executed without exposing thepassivated seed metal layer to fresh contamination, whereby two optionsare available: the preferred method is electrolytic plating; analternative method is electroless plating. When the buffer layer isdeposited as a copper layer by an electroless plating process, it isadvantageous to use a plating bath for fine grain, low stress deposits.As an example, a suitable plating bath is commercially available as the“Circuposit” electroless copper 3350 from Shipley Company, Marlborough,Mass., USA.

In order to create the embodiment of FIG. 5, the buffer layer or stud508 is deposited as described above. A barrier layer 511 is thendeposited over the stud 508, preferably by an electroless platingtechnique. Material and thickness of the barrier layer 511 are selectedto let it resist diffusion of the buffer metal. If the stud 508 is madeof copper, the barrier layer should resist copper diffusion. Usually,the metal is less noble than copper and is preferably nickel; otheroptions include tin, lead, cobalt, iron, chromium, zinc, magnesium,aluminum, and alloys thereof. When nickel is selected as barrier metal,the preferred thickness of the layer 511 is in the range from 1 to 5 μm.(As commonly practiced, the term “more noble metal” or “less noblemetal” refers to the relative position of that particular metal comparedto another metal in the table of electrochemical potentials, in whichall metals are rank-ordered for their ability to be oxidized; the lowera metal is ranked, the harder it is to be oxidized and thus the more“noble” it is).

Next, the outermost layer 512 is deposited over the barrier layer 511,again preferably by an electroless plating technique. The top surface ofthe outermost layer 512 is smooth; its average surface roughness is lessthan about 50 nm. The material of layer 512 is preferably more noblethan the material of layer 511 and the stud 508 and is selected so thatit is wire bondable (ball, wedge, and ribbon bonding), meaning that awire or ribbon will reliably adhere to the surface. Due to the surfacesmoothness of layer 512, wire bonding provides uniform metalinterdiffusion and thus reliable welds. Preferably, layer 512 is made ofgold or palladium; other options include silver, platinum, and alloysthereof. When gold is selected, layer 512 has a preferred thicknessrange from about 50 and 250 nm.

Next, the photoresist material is stripped; this step exposes theportions of the seed layer outside of the buffer metal. These seed layerportions are then removed by etching, conveniently in a wet etchsolution of H₂SO₄, H₂O₂, and NH₄OH. Thus, the embodiment of FIG. 3 iscreated. In order to create the embodiments of FIGS. 4 and 5 with theirconductive traces to allow a redistribution of the connections betweenthe buffer metal and the windows to the chip metallization, a freshphotoresist layer is deposited and patterned to protect selectedsegments of the seed metal layer before the step of removing the exposedseed layer portions.

For the embodiments in FIGS. 3 and 4, a bump of reflowable metal (309and 409, respectively) is deposited onto the buffer metal (308 and 408,respectively). For the embodiment of FIG. 5, a bonding wire 509 isattached to the outermost bondable layer 512.

While this invention has been described in reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription.

It is therefore intended that the appended claims encompass any suchmodifications and embodiments.

1. A semiconductor device including a contact pad and circuitmetallization on the surface of an integrated circuit chip, comprising:a stack of protection layers over the surface of said chip, said stackcomprising a first inorganic layer on said surface, a polymer layer onsaid first inorganic layer, and a second inorganic layer on said polymerlayer; a window in said stack of layers exposing said metallization onsaid integrated circuit chip; a patterned seed metal layer on saidmetallization in said window and on said second inorganic layer aroundsaid window; and a buffer metal layer positioned on said seed metallayer.
 2. The device according to claim 1 wherein said interconnectingmetallization comprises copper.
 3. The device according to claim 1wherein said first inorganic layer comprises silicon nitride.
 4. Thedevice according to claim 1 wherein said first inorganic layer isselected from a group consisting of silicon nitride, silicon oxynitride,silicon carbide, polyimide, and stacked layer of said materials.
 5. Thedevice according to claim 1 wherein said first inorganic layer has athickness in the range from about 0.5 to 2 μm.
 6. The device accordingto claim 1 wherein said polymer layer comprises benzocyclobutene orpolybenzoxazole.
 7. The device according to claim 1 wherein said polymerlayer is selected from a group consisting of polyimides, polyamic acids,polybenzoxazoles, benzocyclobutenes, polybenzocyclobutenes, andpolysiloxanes.
 8. The device according to claim 1 wherein said polymerlayer has a thickness of the range from about 3 to 10 μm.
 9. The deviceaccording to claim 1 wherein said second inorganic layer comprisessilicon dioxide.
 10. The device according to claim 1 wherein said secondinorganic layer is a dielectric selected from a group consisting ofsilicon dioxide, silicon nitride, silicon oxynitride, and stacked layersthereof.
 11. The device according to claim 1 wherein said secondinorganic layer has a thickness from about 0.5 to 2 μm.
 12. The deviceaccording to claim 1 wherein said seed metal comprises copper.
 13. Thedevice according to claim 1 wherein said seed metal overlaps said secondinorganic layer by an amount between about 5 and 15 μm.
 14. The deviceaccording to claim 1 wherein said buffer metal comprises a single metallayer.
 15. The device according to claim 14 wherein said single metallayer comprises copper or a copper alloy.
 16. The device according toclaim 1 wherein said buffer metal comprises a stack of metal layers. 17.The device according t claim 16 wherein said stack of metal layerscomprises copper in contact with said seed metal, nickel on top of saidcopper, and palladium as outermost metal.
 18. The device according toclaim 1 further comprising a metal reflow element attached to saidbuffer metal.
 19. The device according to claim 1 further comprising abond wire attached to said buffer metal.
 20. A semiconductor deviceincluding a contact pad and circuit metallization on the surface of anintegrated circuit chip, comprising: a stack of protection layers overthe surface of said chip, said stack comprising a first inorganic layeron said surface, a polymer layer on said first inorganic layer, and asecond inorganic layer on said polymer layer; a window in said stack oflayers exposing said metallization on said integrated circuit chip; aseed metal layer on said metallization in said window and on said secondinorganic layer, said seed metal layer patterned to form an extendedtrace remote from said window; and a patterned buffer metal layerpositioned on a selected location of said seed metal layer.
 21. Thedevice according to claim 20 further comprising a metal reflow elementattached to said buffer metal.
 22. The device according to claim 20further comprising a bond wire attached to said buffer metal.
 23. Awafer-level method for the fabrication of bonding pads on integratedcircuit wafers having interconnection metallization, comprising thesteps of: depositing over the wafer surface a stack of protection layerscomprising: a first layer of inorganic material; a layer of polymermaterial over said first inorganic layer; and a second layer ofinorganic material over said polymer layer; patterning said stack ofprotection layers by opening a plurality of windows in said stack toexpose portions of said chip interconnection metallization; depositing aconductive seed layer covering said patterned stack; and depositing abuffer metal layer onto said exposed seed layer.
 24. The methodaccording to claim 23 wherein said step of depositing a buffer metallayer comprises depositing a a buffer metal layer on said seed layer ata location remote from said window.
 25. The method according to claim 23wherein said buffer metal layer comprises a single metallic layer. 26.The method according to claim 25 further comprising the step ofdepositing a bump of reflowable metal onto said buffer metal layer. 27.The method according to claim 23 wherein said buffer metal layercomprises a stack of metal layers including an outermost bondable metallayer.
 28. The method according to claim 27 further comprising the stepof attaching a bonding wire to said outermost bondable layer of saidstack.